项目名称： 基于传输极性优化的高频低功耗碳纳米管场效应管设计

项目编号： No.61204130

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 周海亮

作者单位： 中国人民解放军国防科学技术大学

项目金额： 26万元

中文摘要： 由于优越的性能及尺寸缩小前景，碳纳米管场效应管被认为是最有可能构筑未来纳电子系统的基本单元器件之一。但由于其相对较小的禁带宽度及有效载流子质量，源、漏端与导电沟道界面处可能发生的载流子带间隧穿将致使器件呈现出较明显的双极性传输极性，增大器件静态泄漏电流及反向亚阈值斜率，极大影响器件在高频、低功耗领域的应用前景。本课题主要研究：（1）分析碳纳米管场效应管中带间隧穿的发生条件，分析消除双极性传输的物理机理；（2）采用非平衡格林函数对肖特基接触、声子散射建模，建立完善的碳纳米管场效应管数值模型，比较研究声子散射对器件传输极性的影响；（3）从栅极工程、材料工程、掺杂工程出发，提出多种优化设计方法，以削弱甚至消除带间隧穿对功耗、频率等性能指标的影响；（4）研究碳纳米管场效应管与金属连线间的肖特基接触对器件性能的影响；（5）比较分析各优化设计优缺点，为既定性能需求下器件优化策略的选取提供理论指导。

中文关键词： 碳纳米管场效应管；亚阈值性能；静电掺杂；异质栅；梯度掺杂

英文摘要： Due to the excellent device performance and scaling perspectives, Carbon Nanotube Field Effect Transistors(CNFETs) are taken as one of the most promising candidates for building blocks of nano-electronic system. The relative small band gap and effective carrier mass of carbon nanotube, however, contribute to the band-to-band tunneling at channel-source and channel-drain interfaces, which would result in the ambipolar conductance of the device. The increased leackage current and reverse sub-threshold slope, contributed from ambipolar conductance, would in turn affect the applying perspectives of CNFETs in high frequency and low power area. The research in this project is mainly focused on: (1)Analysis of the occuring condition of band-to-band tunneling in CNFETs and the corresponding elimination solutions. (2)Optimization of the numerical device model by setting up the Non-Equilibrium Green's Function model of schottky contact and phonon scattering, followed by compareing study of the effect of phonon scattering on the conductance polarity of the device. (3)Proposing several optimization strategies based on "gate engineering" "material engineering" and "doping engineering", with the aim of reducing or even eliminating the effect of band-to-band tunning on the frequency and power property of the device. (4)Study o

英文关键词： CNFET；subthreshold performance；Electrostatic Doping；Dual-Gage-Material；Stair-case Doping