Emerging non-volatile memories (NVMs) represent a disruptive technology that allows a paradigm shift from the conventional von Neumann architecture towards more efficient computing-in-memory (CIM) architectures. Several instrumentation platforms have been proposed to interface NVMs allowing the characterization of single cells and crossbar structures. However, these platforms suffer from low flexibility and are not capable of performing CIM operations on NVMs. Therefore, we recently designed and built the NeuroBreakoutBoard, a highly versatile instrumentation platform capable of executing CIM on NVMs. We present our preliminary results demonstrating a relative error < 5% in the range of 1 k$\Omega$ to 1 M$\Omega$ and showcase the switching behavior of a HfO$_2$/Ti-based memristive cell.

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