The lack of open-source memory compilers in academia typically causes significant delays in research and design implementations. This paper presents an open-source memory compiler that is irectly integrated within the Cadence Virtuoso environment using physical verification tools provided by Mentor Graphics (Calibre). It facilitates the entire memory generation process from netlist generation to layout implementation, and physical implementation verification. To the best of our knowledge, this is the first open-source memory compiler that has been developed specifically to automate Resistive Random Access Memory (RRAM) generation. RRAM holds the promise of achieving high speed, high density and non-volatility. A novel RRAM architecture, additionally is proposed, and a number of generated RRAM arrays are evaluated to identify their worst case control line parasitics and worst case settling time across the memristors of their cells. The total capacitance of lines SEL, N and P is 5.83 fF/cell, 3.31 fF/cell and 2.48 fF/cell respectively, while the total calculated resistance for SEL is 1.28 Ohm/cell and 0.14 Ohm/cell for both N and P lines.

翻译：在学术界缺乏开放源码内存汇编器通常会造成研究和设计实施方面的严重延误。本文件展示了一个使用导师图形公司(Calibre)提供的实物核查工具在Cadence Virtuos环境内密不可分的开放源码内存汇编器。它便利了从网络列表生成到布局执行的整个记忆生成过程,以及实际实施核查。据我们所知,这是第一个专门为自动保存随机存取内存(RRAM)生成而开发的开放源码内存汇编器。RRAM有望实现高速、高密度和非挥发性。还提议了一个新的RRAM结构,并对生成的RRAM阵列进行了评估,以确定其最差的病例控制线寄生虫和最坏的病例沉积时间跨其细胞的模集体。SEL、N和P线路的总能力分别为5.83 f/cell、3.31 fF/cell和2.48 fF/cell。而SEL的计算抵抗力总和N-28M和P Oh4m/cell的防线是0.14m/cell。