Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam induced current measurements as a powerful method to monitor the development of local resistive switching in TiO2 based devices. By comparing beam-energy dependent electron beam induced currents with Monte Carlo simulations of the energy absorption in different device layers, it is possible to deconstruct the origins of filament image formation and relate this to both morphological changes and the state of the switch. By clarifying the contrast mechanisms in electron beam induced current microscopy it is possible to gain new insights into the scaling of the resistive switching phenomenon and observe the formation of a current leakage region around the switching filament. Additionally, analysis of symmetric device structures reveals propagating polarization domains.

翻译：金属氧化物抗冲开关在下一代神经形态网络中作为可能的人工突触越来越重要,然而,仍然没有一套用于研究装置特性的编码工具。为此,我们展示了电子束诱导的电流测量,作为监测TiO2基设备中局部抗冲开关开发的有力方法。通过将波束-能源依赖电子束导电流与蒙特卡洛模拟不同设备层吸收能量的模拟相比,可以解构丝形图像形成的根源,并将它与形态变化和开关状态联系起来。通过澄清电子束诱导的电波反比机制,可以对抗冲开关现象的规模进行新的了解,并观察当前在开关丝带周围的渗漏区域形成。此外,对等装置结构的分析揭示了可传播的两极化领域。