Resistive random-access memory is one of the most promising candidates for the next generation of non-volatile memory technology. However, its crossbar structure causes severe "sneak-path" interference, which also leads to strong inter-cell correlation. Recent works have mainly focused on sub-optimal data detection schemes by ignoring inter-cell correlation and treating sneak-path interference as independent noise. We propose a near-optimal data detection scheme that can approach the performance bound of the optimal detection scheme. Our detection scheme leverages a joint data and sneak-path interference recovery and can use all inter-cell correlations. The scheme is appropriate for data detection of large memory arrays with only linear operation complexity.

翻译：耐性随机存取记忆是下一代非挥发性内存技术最有希望的候选技术之一。然而,其横截结构导致严重的“偷窥式”干扰,这也导致细胞间密切的相互关系。最近的工作主要侧重于亚最佳数据探测计划,忽视细胞间的相关性,将偷窥式干扰视为独立噪音。我们提出了一个接近最佳数据探测计划,可以接近最佳探测计划的性能约束。我们的探测计划利用联合数据和偷窥式干扰恢复,可以使用所有细胞间的相关性。这个计划适合于对只有线性操作复杂性的大型记忆阵列进行数据探测。